DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS IN SILICON MULTILAYER STRUCTURES DOPED WITH HAFNIUM ATOMS

By means of methods transient capacitance spectroscopy of deep levels has been used to study defect formation in silicon multilayer structures doped with hafnium atoms. It has been established that the presence of electrically active hafnium atoms in the silicon substrate of the MIS structures leads to an increase in the density of the surface states Nss and the appearance of distinct peaks caused by hafnium atoms with deep levels of Ec-0.23 eV and Ec-0.28 eV on n-Si and Ev+0.35 eV on p-Si. The presence of an electroneutral hafnium impurity in the silicon substrate of the MIS structures does not lead to a change in the density of the surface states of the MIS structures and the DLTS spectra.