In the original languageTranslation into English

INFLUENCE OF A STRONG ELECTRIC FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF THREE-LAYER SEMICONDUCTOR STRUCTURES IN A DIODE CONNECTION

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Khudoyberdiyeva Muhayyoxon Zoirjon-kizi, Mamadaliyeva Nargiza Zokirjon-kizi, Mamatova Mahliyo Adxamovna

Annotation

The effect of an external electric field on the current-voltage characteristics of a three-layer semiconductor structure in a diode connection is calculated. It is assumed that the base of this structure is made of a compensated semiconductor, where there are three: zero, minus and charged impurities. It is taken into account that, in this case, the dependence of the electron and hole concentrations is nonlinear.

Expressions are obtained for the current-voltage characteristic of a long three-layer semiconductor for structures of the following types: p+−n−n+, p+−n−p+, n+−n−n+ etc.

Keywords

impurities.
current-voltage characteristic
external electric field
three-layer semiconductor structure
compensated semiconductor

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Khudoyberdiyeva Muhayyoxon Zoirjon-kizi, Mamadaliyeva Nargiza Zokirjon-kizi, Mamatova Mahliyo Adxamovna

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