INFLUENCE OF A STRONG ELECTRIC FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF THREE-LAYER SEMICONDUCTOR STRUCTURES IN A DIODE CONNECTION

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INFLUENCE OF A STRONG ELECTRIC FIELD ON THE CURRENT-VOLTAGE CHARACTERISTIC OF THREE-LAYER SEMICONDUCTOR STRUCTURES IN A DIODE CONNECTION

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Khudoyberdiyeva Muhayyoxon Zoirjon-kizi, Mamadaliyeva Nargiza Zokirjon-kizi, Mamatova Mahliyo Adxamovna

Rubric:Physics
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The effect of an external electric field on the current-voltage characteristics of a three-layer semiconductor structure in a diode connection is calculated. It is assumed that the base of this structure is made of a compensated semiconductor, where there are three: zero, minus and charged impurities. It is taken into account that, in this case, the dependence of the electron and hole concentrations is nonlinear.

Expressions are obtained for the current-voltage characteristic of a long three-layer semiconductor for structures of the following types: p+−n−n+, p+−n−p+, n+−n−n+ etc.

Keywords

current-voltage characteristic
external electric field
three-layer semiconductor structure
compensated semiconductor
impurities.

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Khudoyberdiyeva Muhayyoxon Zoirjon-kizi, Mamadaliyeva Nargiza Zokirjon-kizi, Mamatova Mahliyo Adxamovna

References:

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5. Rasulov, R. Ya., Madgaziyev, A. A., Rayimjonova, U., Mamatova, M. A., & Muminov, I. A. (2019). Agency of surface recombination on volt-ampere characteristic of the diode with double injection. European science review, (11-12), 70-73.

6. Rasulov, R. Ya., Rayimjonova, U., Mamatova, M. A., Nosirov, M. X., & Muminov, I. A. (2019). To the theory of current-voltage characteristics of the three-layer structure of semiconductors in diode switching. European science review, (11-12), 74-76.

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