VOLT-AMPERE CHARACTERISTICS OF A THREE-LAYER SEMICONDUCTOR DIODE OF DOUBLE INJECTION

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VOLT-AMPERE CHARACTERISTICS OF A THREE-LAYER SEMICONDUCTOR DIODE OF DOUBLE INJECTION

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Karimova Mahliyo Nematjon qizi, Mirzaakbarov Dilshodjon Dovlatboyevich, Mamatova Mahliyo Adxamovna

Rubric:Physics
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Annotation

Expressions are obtained for the electron current density distribution over the thickness of the base of a three-layer semiconductor double-injection diode made of semiconductors with deep impurity levels, which is associated with an increase in the bipolar drift mobility of current-carrying carriers. Analytical expressions for the voltage - current characteristics of such diodes are obtained. The minimum voltage at the base of the diode is determined.

Keywords

current density
electrons
three-layer semiconductor diode
double injection
semiconductor
bipolar drift mobility
current-voltage characteristic.

Authors

Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Karimova Mahliyo Nematjon qizi, Mirzaakbarov Dilshodjon Dovlatboyevich, Mamatova Mahliyo Adxamovna

References:

[1] Gurin N.T., Korneev I.V., Maksin A.N., Novikov S.G. Position-sensitive combined device with N-shaped voltage - current characteristic. // Proceedings of the IV Russian seminar on fiber lasers. - Ulyanovsk: UlGU. -2010. - P. 125 (in Russian).

[2]. Kashtankin I.A., Turin N.T. Temperature characteristics of bipolar N-devices with a controlled voltage - current characteristic // Nano- and microsystem technology. -2006. -No. 6. -Pp. 41-43(in Russian).

[3] Adirovich E.I., Karageorgy-Alkalaev P.M., Leiderman A.Yu. Double injection currents in semiconductors. -M.: -Soviet Radio, 1978. -320 p(in Russian).

[4] Stafeev V.I., Vikulin I.M. S-diodes semiconductor devices and their application / Ed. Ya.A. Fedotova. -M.: Sov. Radio. -1974. -No. 28. -Pp. 28-56(in Russian).

[5] Kazarinov R.F., Skobov V.G. On the theory of nonlinear galvanomagnetic phenomena in semiconductors. - ZhETF, 1962, Vol.42, No.4, Pp. 1047-1053(in Russian).

[6] Stafeev V.I. The influence of the resistance of the thickness of a semi-conductor on the form of the voltage - current characteristic of the diode. ZhTF, 1958, Vol. 28, No. 8, Pp. 1631-1641(in Russian).

[7] Milns, A. (1977). Impurities with deep levels in semiconductors. Moscow, Mir.

[8] Baranenkov A.I., Osipov V.V. Volt-ampere characteristics of long diodes from compensated semiconductors // FTP. -1969. -Vol.3. -No.1. –P.39-44 (in Russian).

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