VOLT-AMPERE CHARACTERISTICS OF A THREE-LAYER SEMICONDUCTOR DIODE OF DOUBLE INJECTION
Authors
Mamatova Mahliyo Adxamovna, Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Karimova Mahliyo Nematjon qizi, Mirzaakbarov Dilshodjon Dovlatboyevich
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Annotation
Expressions are obtained for the electron current density distribution over the thickness of the base of a three-layer semiconductor double-injection diode made of semiconductors with deep impurity levels, which is associated with an increase in the bipolar drift mobility of current-carrying carriers. Analytical expressions for the voltage - current characteristics of such diodes are obtained. The minimum voltage at the base of the diode is determined.
Keywords
Authors
Mamatova Mahliyo Adxamovna, Rasulov Rustam Yavkachovich, Rasulov Vohob Rustamovich, Karimova Mahliyo Nematjon qizi, Mirzaakbarov Dilshodjon Dovlatboyevich
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References:
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