RELATION BETWEEN THE CONCENTRATION OF NONEQUILIBRIUM ELECTRONS AND HOLES IN LONG SEMICONDUCTOR DIODES

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RELATION BETWEEN THE CONCENTRATION OF NONEQUILIBRIUM ELECTRONS AND HOLES IN LONG SEMICONDUCTOR DIODES

Authors

Dilshodbek Mirzaakbarov, Forrukh Kasimov, Rasulov Rustam Yavkachovich, Mamatova Mahliyo Adxamovna

Rubric:Physics
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Analytical expressions are obtained for the dependence of the concentration of nonequilibrium current carriers on the parameters of deep impurities in compensated semiconductors, where the capture of carriers to deep impurity levels is taken into account. It is pointed out that the relationship between the concentration of nonequilibrium carriers is greatly complicated due to the variety of recombination processes and the generation of current carriers through multiply charged impurities. In this connection, below we analyze the dependences of nonequilibrium electrons and holes on the parameters of deep impurity centers.

Keywords

nonequilibrium current carriers
deep impurity centers
recombination and generation through multiply charged impurities

Authors

Dilshodbek Mirzaakbarov, Forrukh Kasimov, Rasulov Rustam Yavkachovich, Mamatova Mahliyo Adxamovna

References:

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2. Kashtankin I.A., Turin N.T. Temperature characteristics of bipolar N-devices with a controlled current-voltage characteristic // Nano- and microsystem technology. -2006. -No. 6. -Pp. 41-43(in Russian).

3. Adirovich E.I., Karageorgy-Alkalaev P.M., Leiderman A.Yu. Double injection currents in semiconductors. -M.: -Soviet Radio, -1978. -320 p.

4. Stafeev V.I., Vikulin I.M. S-diodes semiconductor devices and their application / Ed. Ya.A. Fedotova. -M.: Sov. Radio. -1974. -No. 28. -Pp. 28-56(in Russian).

5. Kazarinov R.F., Skobov V.G. On the theory of nonlinear galvanomagnetic phenomena in semiconductors. - ZhETF, -1962. -Vol. 42, -No.4. -Pp. 1047-1053(in Russian).

6. Stafeev V.I. The influence of the resistance of the thickness of a semi-conductor on the form of the current-voltage characteristic of the diode. ZhTF, -1958. -Vol. 28. -No. 8. -Pp. 1631-1641(in Russian).

7. Milnes A. Impurities with deep levels in semiconductors. Monograph. — M.: Mir. -1977. - 568 p (in Russian).

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