INTERACTION OF LIGHT WITH A SILICON CRYSTAL LATTICE MODIFIED WITH GADOLINIUM ATOMS.
Authors
Khamdamov Jonibek Jumayevich, Matchonov Khusniddin Jamoladdinovich, Utemuratova Khushnida Yusupbekovna, Utamuradova Sharifa Bekmuradovna, Daliev Shakhrukh Khojakbarovich
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The paper presents the results of a study of the effect of gadolinium on the structure of silicon samples, performed using scanning electron microscopy (SEM) and Raman spectroscopy. The distribution of carbon and silicon on the surface of gadolinium-doped substrates was studied using energy-dispersive analysis (EDS). An uneven distribution of carbon atoms was found, with noticeable clusters in certain areas of the surface. The analysis showed a high carbon content, indicating its significant presence in the samples. Small oxygen concentrations indicate the presence of oxide compounds. Doping with gadolinium led to the formation of defects on the surface and an uneven distribution of carbon. Analysis of the Raman spectra showed the presence of several vibrational modes, including scattering on acoustic and optical phonons, as well as modes associated with gadolinium and gadolinium oxide. In addition, the spectra revealed new signals that increase with increasing resistivity of the samples.
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Authors
Khamdamov Jonibek Jumayevich, Matchonov Khusniddin Jamoladdinovich, Utemuratova Khushnida Yusupbekovna, Utamuradova Sharifa Bekmuradovna, Daliev Shakhrukh Khojakbarovich
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