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Method for determining the coordinate distribution of local inhomogeneities in the bulk of a semiconductor

Authors

Vahabov K.I., Mirkomilova M.S., Dzhuraev U.E., Gaibov A.G.

Rubric:Physics
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Quote
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Annotation

A method has been developed for determining the two-coordinate (x and y) distribution of localized impurity atom clusters within the bulk of semiconductor materials. The developed method is used in the preliminary selection of homogeneous materials for the production of semiconductor devices

Keywords

semiconductor material
n-p junction
impedance
local inhomogeneities
grid ohmic contacts

Authors

Vahabov K.I., Mirkomilova M.S., Dzhuraev U.E., Gaibov A.G.

References:

1. Fedina, L.I. “Atomic structure of extended defects in silicon and mechanisms of their formation.” // IX International Conference and VIII School of Young Scientists and Specialists on Current Issues of Physics, Materials Science, Technology, and Diagnostics of Silicon, Nanoscale Structures, and Devices Based on It “SILICON-2012,” July 9–13, 2012, St. Petersburg, p. 34.

2. Smirnov, V.I. Non-destructive methods for testing parameters of semiconductor materials and structures: a tutorial / V.I. Smirnov. - Ulyanovsk: UlSTU, 2012. - 75 p.

3. S.A. Azimov, R.A. Muminov, et al. Silicon-lithium nuclear radiation detectors. Tashkent, ‘Fan’, 1981, 258 p.

          4.R.A. Muмinov, S.A.Radzhapov, N.A.Sagyndykov  and K.M. Nurbaev  Salient feartures of the fabrication of Si(Li) detectors with a large-volume working region // Atomic Energy. – New York, Vol. 98, No. 1, 2005, pp. 69-71.  

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